CHM3252JPT c h e n m k o e n t e r p r i s e c o . , l t d s u r f a c e m o u n t n-channel enhancement mode field effect transistor v o l t a g e 3 0 v o l t s c u r r e n t 7.5 ampere a p p l i c a t i o n f e a t u r e * super high dense cell design for extremely low r ds(on) . construction * n-channel enhancement * s e r v o m o t o r c o n t r o l . * p o w e r m o s f e t g a t e d r i v e r s . * o t h e r s w i t c h i n g a p p l i c a t i o n s . 2006-02 * high power and current handing capability. * lead free product is acquired. c i r c u i t a b s o l u t e m a x i m u m r a t i n g s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l parameter CHM3252JPT units v dss drain-source voltage 30 v v gss gate-source voltage 20 v i d maximum drain current - continuous a - pulsed p d maximum power dissipation 2500 mw t stg storage temperature range -55 to 150 c thermal characteristics r q ja thermal resistance, junction-to-ambient 50 7.5 c/w (note 3) note : 1. surface mounted on fr4 board , t <=10sec 2. pulse test , pulse width <= 300us , duty cycle <= 2% 25 d i m e n s i o n s i n m i l l i m e t e r s so-8 * small flat package. (so-8 ) t j operating temperature range -55 to 150 c 3. repetitive rating , pulse width linited by maximum junction temperature (note 1) 4. guaranteed by design , not subject to production trsting so-8 1 4 8 5 1.27 ( 0.05 )bsc .51 ( 0.02 0 ) .10 (0.012) .25 ( 0.010 ) .17 (0.007) 4.06 ( 0.160 ) 3.70 ( 0.146 ) 5.00 ( 0.197 ) 4.69 ( 0.185 ) 1.75 (0.069) 1.35 ( 0.053 ) 6.20 ( 0.244 ) 5.80 ( 0.228 ) .25 ( 0.010 ) .05 (0.002) 1 4 5 8 s s s g d d d d
r a t i n g c h a r a c t e r i s t i c c u r v e s ( CHM3252JPT ) e l e c t r i c a l c h a r a c t e r i s t i c s t a = 2 5 c u n l e s s o t h e r w i s e n o t e d s y m b o l p a r a m e t e r c o n d i t i o n s m i n t y p m a x u n i t s o f f c h a r a c t e r i s t i c s 28 o n c h a r a c t e r i s t i c s g fs forward transconductance v ds =15v , i d = 7a r ds(on) static drain-source on-resistance m w vgs=10v, id=7a switching characteristics q gs gate-source charge q gd gate-drain charge t on turn-on time ns v dd = 15v i d = 7a , v g s = 10 v 20 t r rise time 8 1 b v d s s drain-source breakdown voltage v gs = 0 v, i d = 250 a n a 30 v n a i gssf dss s zero gate voltage drain current i v ds gate-body leakage = gate-body leakage 30 v, v v gs gs = 20v, = 0 v v ds = 0 v a +100 -100 v gs = -20v, v ds = 0 v v gs (th) gate threshold voltage v ds = v gs , i d = 250 a 1 v vgs=4.5v, id=3.5a 50 t f fall time 10 q g total gate charge 2.5 vds=15v, id=7a vgs=10v turn-off time t off rgen= 3 w (note 2) (note 4) 3 4 nc 9 3 24 4 drain-source diode characteristics and maximum ratings 12.3 i v sd drain-source diode forward current drain-source diode forward voltage i s = 2.3a , v g s = 0 v 2.3 1.2 a v (note 1) (note 2) 40 22 30 1.5 16 i gssr s
rating characteristic curves ( CHM3252JPT ) t y p i c a l e l e c t r i c a l c h a r a c t e r i s t i c s 0 1.0 2.0 0 10 40 4.0 20 30 v , drain-to-source voltage (v) i , dr a in current (a) ds d figure 1. output characteristics 20 1.5 i , dr a in current (a) d 0 5 10 vgs , gate-to-source voltage (v) figure 2. transfer characteristics j=25c t j=125c t j=-55c t 2.0 2.5 4.0 15 10 0 3 6 9 12 15 0 2 4 6 8 qg , total gate charge (nc) vgs , gate to source voltage (v) figure 3. gate charge id=7a vds=15 v 2.2 0.7 -100 1.0 1.6 t , jun ctio n t emperature (c) j 0.4 1.3 1.9 d r a i n - s o u r c e o n - r e s i s t a n c e r , no r m a l i z e d d s ( o n ) f i g u r e 4 . on-resistance variation with temperature id=10a vgs=7v -50 0 50 100 150 200 temperature 1.3 0.7 -50 -25 0 25 50 75 100 125 150 0.9 1.1 t , jun ctio n t emperature (c) j 0.6 0.8 1.0 1.2 threshold voltage vth , normalized gate-source figure 5. gate threshold variation with id=250ua vds=vgs 4.5 3.0 3.5 3.0 5.0 v gs= 10,9,8,7,6v v gs= 5v v gs= 4v v gs= 3v
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